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During a subsequent phase of deformation, second generation shear zones develop and strain in the mantle occurs as focused pure shear necking beneath the rift axis Figures 726d and e show the results of another model where frictional-plastic (brittle) strain softening occurs and the resulting deformation is asymmetric An initial stage is very similar to the early stages of the reference model, but at later times strain softening focuses deformation into one of the conjugate faults (S1B) The asymmetry is caused by a positive feedback between increasing strain and the strength reduction that results from a decreased angle of internal friction (Section 2102) Large displacements on the S2A and T1B shear zones cut out a portion of the lower crust (LC) at point C (Fig 726, insert) and begin to exhume the lower plate By 40 Ma, a.

20c): (i) rapid erosion of the southern ank of the Himalaya; (ii) shortening on the Main Central Thrust (MCT) system and thrust faults to the south; (iii) extension on the South Tibetan Detachment (STD) system; (iv) high-grade metamorphism and crustal melting in the Greater Himalaya; (v) crustal melting in the middle crust beneath Tibet; (vi) juxtaposition of contrasting lithologies across the MCT; (vii) an inverted metamorphic sequence where high-grade rocks are thrust over the Lesser Himalaya along the MCT; (viii) the position of the Indus Zangbo suture; and (ix) normal faults accommodating north south extension in the southern Tibetan Plateau To determine how enhanced erosion coupled with continental underthrusting may explain these principle features, Beaumont et al (2001, 2004) constructed thermomechanical models involving combinations of two related processes The rst process is a channel ow of ductile middle to lower crust.

The Mean Time Between Failure (MTBF) is a composite of the individual MTBF values of the individual components The Mean Time to Recover (MTTR) depends upon the particular details of the high-availability solution put in place by the application architect The highest level of system availability that is practical for commercial applications today is the famous five nines level A system that has 99999 percent availability will have only five minutes and 15 seconds of down time a year Marcus and Stern s Blueprints for High Availability [MS00] is a good reference for the configuration of highly-available systems Enterprise applications are complex, distributed collections of hardware, software, networking, and data Applications also have varying definitions for the term down time, and the proposed options for HA architecture show varying levels of responsiveness, transparency, automation, and data consistency.

Channel ow involves the lateral movement of partially molten crust in a narrow zone bounded above and below by shear zones These authors used this type of ow to explain the progressive growth of the Tibetan Plateau The second process is the ductile extrusion of high-grade metamorphic rocks between coeval normal-sense and thrust-sense shear zones This latter process is used to explain the exhumation of the Greater Himalaya rocks along the southern ank of the mountain range In the models these two processes are linked through the effects of surface denudation (ie the removal of surface material) that is focused along the southern edge of a plateau and the.

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Highly available systems must achieve resilience in the face of many kinds of failure Hardware failures The physical components of the application server might fail A disk crash might cause data loss; a processor failure could halt all computation by causing a fatal OS exception; a fan failure could cause overheating; or a short circuit or loose cabling within the cabinet could cause intermittent and arbitrary system failure Software failures The underlying OS could crash and require a reboot (or worse, a rebuild) The software components on the system, such as middleware products, database processes, or application code, could fail Network failures Connectivity to the network could fail locally through a network interface card (NIC) or cable or on an external router, hub, or bridge If the failure occurs on a chokepoint in the architecture, we might lose all service Infrastructure failures.

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The impurity (B and/or P) concentration in the intrinsic layer is less than 1015 cm 3 . However, the p i n junction diode has a few space charges in the intrinsic layer due to the presence of these few impurities. As a result, the I V and C V characteristics are complicated at a bias voltage higher than around 4 V (region III). For the (001)-oriented diamond p n junctions [32], 1/C 2 V properties had a peak at the forward bias near 1/C 2 = 0. This characteristic indicates the existence of electrically active deep levels with a higher density than that of boron acceptors and/or phosphorus donors in the vicinity of the p n junction. In the case of the p i n junction diodes as shown in Figure 15.13, there is no signi cant peak in the 1/C 2 V curve. Therefore, the density of deep levels could be decreased in comparison with that of the p n junction diodes.